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| 2SC5305 Datasheet, PDF (1/2 Pages) Unisonic Technologies – HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5305
DESCRIPTION
·High Breakdown Voltage
:V(BR)CBO= 1200V (Min)
·High Speed Switching
APPLICATIONS
·Designed for inverter lighting applications.
Absolute maximum ratings (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
12
A
2
W
35
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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