2SC5265 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Inverter-controlled Lighting Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5265
DESCRIPTION
·High Breakdown Voltage-(Vcb=1200V)
High Reliability
Adoption of MBIT proces
APPLICATIONS
·Inverter-controlled Lighting
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current- Continuous
4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
8
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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