2SC5252 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused Planar

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
30
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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