2SC5250 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused Planar

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5250
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T_a=25℃)
SYMBOL
PARAMETER
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
I_D
Diode current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open base
Open collector
T_C=25℃
VALUE
1500
6
8
16
8
50
150
-55~150
UNIT
V
V
A
A
A
W
℃
℃