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2SC5249 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5249
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1.5
A
35
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn