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| 2SC5242 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5242
DESCRIPTION
·High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.)
·Good Linearity of hFE
·Complement to Type 2SA1962
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
130
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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