2SC5218 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5218
DESCRIPTION
·High Gain Bandwidth Product
f_T = 9 GHz TYP.
·High Gain, Low Noise Figure
PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz
APPLICATIONS
·Designed for use in VHF ~ UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
15
V
V_CEO Collector-Emitter Voltage
9
V
V_EBO Emitter-Base Voltage
1.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.15
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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