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| 2SC5200 Datasheet, PDF (1/3 Pages) Unisonic Technologies – POWER AMPLIFIER APPLICATIONS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5200
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min)
·Complement to Type 2SA1943
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
150
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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