2SC5199 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5199
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1942
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation TC=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
160
160
5
12
1.2
120
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃