2SC5174 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5174
DESCRIPTION
·Silicon NPN epitaxial type
·Low Collector Saturation Voltage
·High transition frequency
·Complementary to 2SA1932
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Pulse
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.1
A
1.8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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