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| 2SC5171 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Transition Frenquency : fT=200MHz(Typ.)
·Complementary to 2SA1930
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
isc Product Specification
2SC5171
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
Collector Power Dissipation
Pc
@ TC=25â
TJ
Junction Temperature
1
A
20
W
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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