2SC5150 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR GIHG RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5150
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1700
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_CP
Collector Current-Pulse
20
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn