2SC5147 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage(BVceo=300V).
·Low collector output capacitance(Typ.3pF@Vce=30V).
·Wide SOA(safe operating area)
·Ideal for color TV chroma output and amplification
of video signals
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for medium power transistor(Chroma Output)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.1
A
Collector Power Dissipation
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
W
10
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
2SC5147
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