2SC5128 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5128
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO= 500V(Min)
·High Speed Switching
·Full-pack package with outstanding insulation,
which can be in staled to the heat sink with one screw
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
500
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak
10
A
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
3
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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