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| 2SC5090 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5090
DESCRIPTION
·High Gain Bandwidth Product
fT = 10 GHz TYP.
·High Gain, Low Noise Figure
︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
V
1.5
V
40
mA
20
mA
0.1
W
125
â
-55~125
â
isc websiteï¼www.iscsemi.cn
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