2SC5065 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5065
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱²= 12 dB TYP.
@VCE = 5 V, f = 1.0 GHz
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
30
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
15
mA
0.1
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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