2SC5064 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (WHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5064
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S_21e︱²= 12 dB TYP.
@V_CE = 5 V, f = 1.0 GHz
APPLICATIONS
·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_B
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
V
3.0
V
30
mA
15
mA
0.15
W
125
℃
-55~125
℃
isc website：www.iscsemi.cn
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