2SC5043 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Very High-Definition CRT Display Horizontal Deflection Output Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5043
DESCRIPTION
·NPN triple diffused planar silicon transistor
·High Breakdown Voltage
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Very high-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
24
A
2
W
50
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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