2SC4977 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 0.8V(Max.)@ I_C= 4.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
2
A
40
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 3.125 ℃/W
isc Product Specification
2SC4977
isc Website：www.iscsemi.cn