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| 2SC4960 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4960
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min)
·High Switching Speed
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCES
Collector-Emitter Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
2
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.3
A
40
W
3
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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