2SC4953 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4953
DESCRIPTION
·Silicon NPN triple diffusion planar type
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high breakdown voltage high
speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak
6
A
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
1.2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.cn
1
isc & iscsemi is registered trademark