2SC4927 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4927
DESCRIPTION
·With TO-3PML package
·Built-in damper diode
·High breakdown voltage
APPLICATIONS
·TV/Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T_a=25℃)
SYMBOL
PARAMETER
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_C(peak)
Collector current-peak
I_C(surge)
Collector current-surge
Io
C to E diode forward current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open base
Open collector
T_C=25℃
VALUE
1500
6
8
9
18
8
50
150
-55~150
UNIT
V
V
A
A
A
A
W
℃
℃