2SC4901YK Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN RF Transistor

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4901YK
DESCRIPTION
·High gain bandwidth product
fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz
·High gain, low noise figure
︱S21e︱² = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz,
NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·UHF / VHF wide band amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
15
V
VCEO
Collector-Emitter Voltage
9
V
VEBO
Emitter-Base voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
50
mA
100
mW
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}