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| 2SC4881 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4881
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB=B 125mA)
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Pulse
8
A
IBB
Base Current-Continuous
1
A
Total Power Dissipation @TC=25â
20
PT
W
Total Power Dissipation @Ta=25â
2.0
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
isc Websiteï¼www.iscsemi.cn
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