2SC4850 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4850
DESCRIPTION
·Low Collector Saturation Voltage
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.5
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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