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| 2SC4848 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4848
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max)@ IC= 5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
2
W
40
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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