2SC4807 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4807
DESCRIPTION
·High Gain-Bandwidth Product
f_T= 4.4 GHz TYP.
·High Output Power
1 dB Power compression point P_cp = 24 dBm TYP.
@ V_CE = 5V , I_C = 100 mA , f = 900 MHz
APPLICATIONS
·Designed for VHF ~ UHF wide band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
2
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.2
A
0.8
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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