2SC4796 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4796
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1700V(Min)
·High Switching Speed
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition color display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
900
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
16
A
2.5
W
50
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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