2SC4793 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4793
DESCRIPTION
With TO-220F package
Complement to type 2SA1837
High transition frequency
APPLICATIONS
Power amplifier applications
Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
230
230
5
1
0.1
20
2.0
150
-55~150
UNIT
V
V
V
A
A
W