 English |
|
|
|
|
|
|
|
| 2SC4766 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – High Switching Speed | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4766
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1700
V
VCEO Collector-Emitter Voltage
600
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
±6
A
ICP
Collector Current-Pulse
±12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
3
A
50
W
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese