2SC4765 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4765
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1700
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
±5
A
I_CP
Collector Current-Pulse
±10
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2.5
A
50
W
150
℃
-55~150
℃
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