2SC4747 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4747
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base voltage
6
V
IC
Collector Current- Continuous
10
A
IC(_surge) Collector Current-Surge
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
20
A
50
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.cn