2SC4742 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4742
DESCRIPTION
With TO-3PN package
Built-in damper diode
High breakdown voltage
APPLICATIONS
Character display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_C(surge)
Collector current-surge
Io
C to E diode forward current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open base
Open collector
T_C=25
VALUE
1500
6
6
7
16
7
50
150
-55~150
UNIT
V
V
A
A
A
A
W