2SC4703 Datasheet, PDF (1/2 Pages) NEC – MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4703
DESCRIPTION
·Low Distortion at Low Supply Voltage.
IM2- 55 dB TYP., IM3- 76 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105dBμ/75Ω
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low distortion ,low noise RF amplifier operating
with low supply voltage (VCE = 5V).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
25
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
0.15
A
1.8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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