2SC4603R Datasheet, PDF (1/2 Pages) Fuji Electric – Ratigns and Caracteristics of Fuji Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4603R
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 800V(Min.)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
900
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base voltage
10
V
I_C
Collector Current-Continuous
3
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
A
80
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.5 ℃/W
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