 English |
|
|
|
|
|
|
|
| 2SC4596 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4596
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.3V(Max)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V (Min)
·Complement to Type 2SA1757
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
10
A
25
W
2
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese