2SC4591 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4591
DESCRIPTION
·High Current-Gain Bandwidth Product
fT= 9.0GHz TYP. @VCE = 5 V, IC = 20 mA
·Low Noise
NF = 1.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz
·High Power Gain
PG = 12.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
9
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
50
mA
0.15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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