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2SC4585 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Switching Power Transistor(10A NPN)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4585
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min)
·Fast Switching speed
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1200
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
Total Power Dissipation
PT
@ TC=25℃
TJ
Junction Temperature
8
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W
isc Website:www.iscsemi.cn