2SC4574 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SC4574
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·High Reliability
APPLICATIONS
·General purpose power amplifiers
·Including zener diode
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO(SUS) Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
4
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.5 ℃/W
isc website：www.iscsemi.com
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