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| 2SC4570 Datasheet, PDF (1/9 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4570
DESCRIPTION
·High Current-GainâBandwidth Product
fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz
·Low COB
0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz
APPLICATIONS
·Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
V
3.0
V
30
mA
0.12
W
125
â
-55~125
â
isc Websiteï¼www.iscsemi.cn
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