2SC4552 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4552
DESCRIPTION
·With TO-220F package
·High h_FE and low V_CE(sat)
APPLICATIONS
·For high-speed switching
·For use in drivers such as DC-DC
converters and actuators.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_C=25℃
Ta=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
100
60
7
15
30
7.5
30
2
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃