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| 2SC4550 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4550
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= 2V , IC= 1.5A)
·Low Saturation Voltage-
: VCE(sat)= 0.3V(Max)@ (IC= 4A, IB=B 0.2A)
APPLICATIONS
·Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
7.0
A
ICM
Collector Current-Pulse
14
A
IBB
Base Current-Continuous
3.5
A
Total Power Dissipation @TC=25â
30
PT
W
Total Power Dissipation @Ta=25â
2.0
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
isc Websiteï¼www.iscsemi.cn
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