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| 2SC4549 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4549
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= 2V , IC= 1A)
·Low Saturation Voltage-
: VCE(sat)= 0.3V(Max)@ (IC= 3A, IB=B 0.15A)
APPLICATIONS
·Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
5.0
A
ICM
Collector Current-Pulse
10
A
IBB
Base Current-Continuous
2.5
A
Total Power Dissipation @TC=25â
25
PT
W
Total Power Dissipation @Ta=25â
2.0
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
isc Websiteï¼www.iscsemi.cn
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