2SC4537 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4537
DESCRIPTION
·Low Noise
NF = 1.6 dB TYP., @V_CE = 5 V, I_C = 5 mA, f = 900 MHz
·High Power Gain
PG = 10 dB TYP. @V_CE = 5 V, I_C = 20 mA, f = 900 MHz
APPLICATIONS
·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
15
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
11
V
2
V
50
mA
0.1
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn