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| 2SC4536 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4536
DESCRIPTION
·Low Noise
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz
·Low Distortion
IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
APPLICATIONS
·Designed for use in middle power , low distortion low noise
figure RF amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
V
3.0
V
0.25
A
2
W
150
â
-65~150
â
isc Websiteï¼www.iscsemi.cn
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