2SC4478 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Definition CRT Display Horizontal Deflection Output Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4478
DESCRIPTION
·Fast switching speed
·NPN epitaxial planar silicon transistor
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High deflection CRT display
·Horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
4
A
30
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.com
1
isc & iscsemi is registered trademark