2SC4461 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4461
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·Fast Switching speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICP
Collector Current-Pulse
40
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
8
A
65
W
3
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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