English
Language : 

2SC4383 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4383
DESCRIPTION
·
·Mold package that does not require an insulating board
or insulation bushing
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in 50KHz class switching
regulators.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
3
A
2.5
W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1
isc & iscsemi is registered trademark