2SC4332 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4332
DESCRIPTION
·Low collector saturation voltage
·Fast switching speed
·High DC current gain and excellent linearity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak ^NOTE1
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃ ^NOTE2
TJ
Junction Temperature
10
A
15
W
1.0
150
℃
Tstg
Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10%
NOTE2:Printing boarding mounted
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}