|
2SC4331-Z Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
|
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4331-Z
DESCRIPTION
·Available for high-current control in small dimension
·Low collector saturation voltage
·Fast switching speed
·High DC current gain and excellent linearity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25â
Collector Power Dissipation
@Ta=25â NOTE2
TJ
Junction Temperature
10
A
15
W
1.0
150
â
Tstg
Storage Temperature Range
-55~150
â
NOTE1:PWâ¤300ms,Duty cycle â¤10%
NOTE2:Printing boarding mounted
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |